Student Paper A Generic Analytical Current Model for Hetero-Junction Double-Gate Tunnel-FETs Including Two-Dimensional Effects

In the last few years the downscaling of MOSFETs has caused problems due to the increasing short-channel effects (SCEs) in the sub 22 nm technology. The conventional MOS transistor has its physical limits due to the drift-diffusion current transport mechanism resulting in a minimal subthresholdslope of 60 . To fall below this physical limit a new device technology with an alternative carrier transport mechanism is needed to allow for reduced operating voltage and lower energy consumption. The Tunnel-Field-Effect-Transistor (TFET) is a promising device because of its band-to-band tunneling carrier transport mechanism at the channel junctions [1]. Carriers entering the channel region are limited by “band pass filtering” with respect to their energy. Recently fabricated devices show a slope S of 40 [2]. In order to simulate complex circuits and predict the electrical behavior special to TFETs a physicsbased, analytical model is needed. The introduced model presents a new generic approach to investigate state of the art hetero junctions in Tunnel-FETs for performance enhancement.